switching diode DAP222WM l applications l dimensions (unit : mm) l land size figure (unit : mm) high frequency switching l features 1)ultra small mold type. (emd3f) 2)high reliability l construction silicon epitaxial planer l structure l absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw tj ? c tstg ? c l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions forward voltage v f - - 1.2 v i f =100ma reverse current i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , i f =5ma , r l =50 reverse voltage (dc) 80 l taping dimensions (unit : mm) parameter limits reverse voltage (repetitive) 80 forward voltage(repetitive peak) 300 average rectified forward current 100 surge current(t=1s) 4 power dissipation 150 junction temperature 150 storage temperature - 55 to + 150 parameter capacitance between terminals reverse recovery time emd3 rohm : emd3f dot (year week factory) 1/3 2011.12 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 1.0 0.7 0.5 0.5 0.7 0.7 0.6 0.6 1.3 www.datasheet.co.kr datasheet pdf - http://www..net/
DAP222WM 0.001 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=25 c ta=125 c ta=75 c ta=150 c forward voltage v f (mv) v f - i f characteristics forward current:i f (ma) 0.1 1 10 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 ta=125 c ta=25 c ta=75 c ta=150 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 0.1 1 10 0 5 10 15 20 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 850 860 870 880 890 900 910 v f dispersion map forward voltage:v f (mv) ave:884mv ta=25 c i f =100ma n=30pcs 0 10 20 30 40 50 reverse current:i r (na) i r dispersion map ta=25 c v r =70v n=10pcs ave:11na 4 5 6 7 8 9 10 ave:5.03pf capacitance between terminals:ct(pf) ct dispersion map ta=25 c v r =0v f=1mhz n=10pcs 2/3 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
DAP222WM 0 5 10 15 20 ave:2.50a 8.3ms i fsm 1cyc i fsm dispersion map peak surge forward current:i fsm (a) 0 10 20 30 40 50 ave:19.3ns trr dispersion map reverse recovery time:trr(ns) i f =i r =100ma i rr =0.1i r 0 1 2 3 4 5 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 8.3ms i fsm 1cyc 8.3ms 1 10 100 0.1 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) 1ms im=100ma i f =10a 300us time mounted on epoxy board time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 1 2 3 4 5 6 7 8 9 10 ave:1.47kv c=200pf r=0 c=100pf r=1.5k ave:2.98kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes www.datasheet.co.kr datasheet pdf - http://www..net/
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